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Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum conversion

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

Frontiers of Chemical Science and Engineering 2020, Volume 14, Issue 6,   Pages 997-1005 doi: 10.1007/s11705-019-1906-0

Abstract: Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost, less material consumption and easy mass production. Among them, micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber layers. Yet individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific absorber. In this work, we designed and simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet, green, red as well as near infrared range, respectively. By tuning the Ge content, the record efficiency of 24.80% has been realized with the typical quadruple junction structure of a-Si:H/a-Si Ge :H/µc-Si:H/µc-Si Ge :H. To further reduce the material cost, thickness dependent device performances have been conducted. It can be found that the design of total thickness of 4 m is the optimal device design in balancing the thickness and the . While the design of ultrathin quadruple junction device with total thickness of 2 m is the optimized device design regarding cost and long-term stability with a little bit more reduction in . These results indicated that our solar cells combine the advantages of low cost and high stability. Our work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.

Keywords： thin films     solar cells     quadruple junction solar cell     amorphous silicon     silicon germanium alloy     quantum    

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Study on the Development of Germanium Industry in Yunnan Province

Lei Ting,Wang Shaolong

Strategic Study of CAE 2007, Volume 9, Issue 11,   Pages 103-109

Abstract:

Germanium is a typical dispersed element, it is the most important semiconductormaterial except for silicon.Today, Germanium is used principally in the field of infrared optical, telecommunication fiber opticsGermanium resource is scarce in the earth. The reserve of germanium in China ranks first in the world.

Keywords： germanium resources     industrial development of germanium     sustainable development     Yunnan    

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Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Frontiers of Environmental Science & Engineering 2015, Volume 9, Issue 5,   Pages 905-911 doi: 10.1007/s11783-015-0786-x

Abstract: The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity,

Keywords： silicon (Si)     lead (Pb)     rice (Oryza sativa L.)     toxicity     accumulation    

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Frontiers in Energy 2011, Volume 5, Issue 3,   Pages 305-312 doi: 10.1007/s11708-011-0155-9

Abstract: A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

Keywords： computer modeling     silicon     crystal growth     solar cells    

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A novel shape memory alloy actuated soft gripper imitated hand behavior

Frontiers of Mechanical Engineering 2022, Volume 17, Issue 4, doi: 10.1007/s11465-022-0700-8

Abstract: The limited length shrinkage of shape memory alloy (SMA) wire seriously limits the motion range of SMA-based

Keywords： shape memory alloy (SMA)     pre bent     wire     gripper     grasping mode     lightweight    

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Study on Germanium Extraction From Zinc Sulfate Leached Solution

Bao Fuyi,Fang Jun,Zhu Dahe,Chen Shiming,Huang Huatang,Li Xuequan,Liu Tao,Wang Kan,Huang Yanfen

Strategic Study of CAE 2001, Volume 3, Issue 12,   Pages 58-67

Abstract: The Ge extraction is higher than 96% , are re-extraction is higher than 97% , Ge conlent in the germanium

Keywords： extraction     germanium     7815     T-reagent    

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Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 570-579 doi: 10.1007/s11465-021-0642-6

Abstract: The interfacial wear between silicon and amorphous silica in water environment is critical in numerousHerein, reactive force field simulations are utilized to study the interfacial process between silicon

Keywords： silicon     ReaxFF     molecular dynamics     friction     damage    

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Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

Frontiers of Mechanical Engineering 2007, Volume 2, Issue 1,   Pages 120-124 doi: 10.1007/s11465-007-0021-y

Abstract: Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space-flightExperimental results show that the density of high-silicon aluminum alloys prepared with this method

Keywords： coefficient     hermeticity     temperature     relationship     air-atomization    

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Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Strategic Study of CAE 2000, Volume 2, Issue 1,   Pages 7-17

Abstract: Since silicon based materials as the alternative material systems have received strong growing interest, the manufacturing technologies and applications of SiGe, silicon-on-insulator (SOI) have been introducedFinally, the author outlooks the future scientific and engineering challenges and opportunities for siliconand silicon based materials envisioned for the sub quarter-micro and nanometer integrated circuits as

Keywords： silicon wafers     epitaxial silicon wafers     SiGe     silicon-on-insulator (SOI)     impurities behavior     defects control    

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Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 23-31 doi: 10.1007/s11708-016-0441-7

Abstract: One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers, a novel laser based method for gettering is investigated for its impact on commercially available silicon

Keywords： gettering     multicystaline     silicon     impurities     laser doping    

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Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 1-3 doi: 10.1007/s11708-016-0436-4

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Numerical analysis of aluminum alloy reticulated shells with gusset joints under fire conditions

Frontiers of Structural and Civil Engineering 2023, Volume 17, Issue 3,   Pages 448-466 doi: 10.1007/s11709-022-0910-5

Abstract: In this study, a numerical analysis was conducted on aluminum alloy reticulated shells (AARSs) with gusset

Keywords： aluminum alloy reticulated shell     gusset joint     numerical analysis     fire resistance    

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Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

Frontiers in Energy 2022, Volume 16, Issue 5,   Pages 876-877 doi: 10.1007/s11708-022-0832-x

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Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 559-569 doi: 10.1007/s11465-020-0624-0

Abstract: Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of siliconGrinding experiments using coarse and fine resin-bond diamond grinding wheels were performed on siliconHowever, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deterioratedThe PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheelThe surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh

Keywords： taping     silicon wafer     backgrinding     subsurface damage     surface roughness    

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Ultraviolet exposure enhanced silicon direct bonding

Guanglan LIAO, Xuekun ZHANG, Xiaohui LIN, Canghai MA, Lei NIE, Tielin SHI,

Frontiers of Mechanical Engineering 2010, Volume 5, Issue 1,   Pages 87-92 doi: 10.1007/s11465-009-0078-x

Abstract: technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic siliconThe effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied.It is found that the surface roughness of silicon wafers initially decreases and then increases withIt follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon

Keywords： ultraviolet (UV) exposure     silicon direct bonding     bonding strength     reliability    

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Title Author Date Type Operation

Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum conversion

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

Journal Article

Study on the Development of Germanium Industry in Yunnan Province

Lei Ting,Wang Shaolong

Journal Article

Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Journal Article

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Journal Article

A novel shape memory alloy actuated soft gripper imitated hand behavior

Journal Article

Study on Germanium Extraction From Zinc Sulfate Leached Solution

Bao Fuyi,Fang Jun,Zhu Dahe,Chen Shiming,Huang Huatang,Li Xuequan,Liu Tao,Wang Kan,Huang Yanfen

Journal Article

Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

Journal Article

Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

Journal Article

Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Journal Article

Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

Journal Article

Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

Journal Article

Numerical analysis of aluminum alloy reticulated shells with gusset joints under fire conditions

Journal Article

Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

Journal Article

Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

Journal Article

Ultraviolet exposure enhanced silicon direct bonding

Guanglan LIAO, Xuekun ZHANG, Xiaohui LIN, Canghai MA, Lei NIE, Tielin SHI,

Journal Article